View LTC5532_452139.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Final Electrical Specifications
LTC5532 300MHz to 7GHz Precision RF Power Detector with Gain and Offset Adjustment
August 2003
FEATURES
s s s s s s s s s
DESCRIPTIO
Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz Wide Input Power Range: -32dBm to 8dBm Buffered Detector Output with External Gain Control Precision VOUT Offset Control Low Offset Voltage: 120mV 35mV for Gain = 2x Wide VCC Range of 2.7V to 6V Low Operating Current: 500A Available in a Low Profile (1mm) SOT-23 Package
The LTC(R)5532 is an RF power detector for RF applications operating in the 300MHz to 7GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. The LTC5532 output buffer gain is set via external resistors. The initial offset voltage of 120mV 35mV can be precisely adjusted using the VOS pin. The LTC5532 operates with input power levels from -32dBm to 8dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation.
APPLICATIO S
s s s s s s s
802.11a, 802.11b, 802.11g, 802.15 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector
TYPICAL APPLICATIO
Output Voltage vs RF Input Power 300MHz to 7GHz RF Power Detector
33pF RF INPUT 1
VOUT OUTPUT VOLTAGE (mV)
3600
VCC = 3.6V 3200 TA = 25C GAIN = 2 2800 VOS = 0V 2400 2000 1600 1200 800 400 2000MHz 3000MHz
LTC5532 VCC 6 RFIN 100pF 5 RA VOS VM
5532 TA01
VCC 0.1F
2
GND
VOUT
VOS REFERENCE
3
4 RB
0 -32 -27 -22 -17 -12 -7 -2 RF INPUT POWER (dBm)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U
U
U
1000MHz
300MHz 4000MHz
5000MHz 6000MHz 7000MHz 3 8
5532 TA02
5532i
1
LTC5532
ABSOLUTE
(Note 1)
AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
TOP VIEW RFIN 1 GND 2 VOS 3 6 VCC 5 VOUT 4 VM
VCC, VOUT, VM, VOS .......................................... -0.3V to 6.5V RFIN Voltage .........................................(VCC 1V) to 7V IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C
ORDER PART NUMBER LTC5532ES6 S6 PART MARKING LTAFS
S6 PACKAGE 6-LEAD PLASTIC TSOT-23
TJMAX = 125C, JA = 250C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 1k, VOS = 0V unless otherwise noted.
PARAMETER VCC Operating Voltage IVCC Operating Current VOUT VOL (No RF Input) VOUT Output Current VOUT Bandwidth VOUT Load Capacitance VOUT Slew Rate VOUT Noise VOS Voltage Range VOS Input Current VM Voltage Range VM Input Current RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V F = 1000MHz, Pin = -25dBm F = 1000MHz, Pin = -25dBm VM = 3.6V VOS = 1V IVOUT = 0mA RLOAD = 2k, VOS = 0V VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV CLOAD = 33pF, RLOAD = 2k (Note 4) (Note 6) VRFIN = 1V Step, CLOAD = 33pF, Total RLOAD = 2k (Note 3) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination, 50 AC Output Termination
q q q q q
ELECTRICAL CHARACTERISTICS
CONDITIONS
MIN
q q q q
TYP 0.5
MAX 6 0.7 155
UNITS V mA mV mA MHz
2.7 85 2 100 to 140 4 2
33 3 1 0 -0.5 0 -0.5 300 to 7000 -32 to 8 220 0.65 1 0.5 VCC -1. 8 0.5
mVP-P V A V A MHz dBm pF
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls.
Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: Bandwidth is calculated based on the 10% to 90% rise time equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design.
2
U
pF V/s
5532i
W
U
U
WW
W
LTC5532 TYPICAL PERFOR A CE CHARACTERISTICS
Output Voltage vs Supply Voltage (RF Input Signal Off)
130 VOS = 0V GAIN = 2 500
VOUT OUTPUT VOLTAGE (mV)
SUPPLY CURRENT (mA)
125
TA = 85C TA = 25C
OUTPUT DELAY (ns)
120 TA = -40C 115
110 2.5
3.0
3.5
5.0 SUPPLY VOLTAGE (V)
4.0
4.5
Typical Detector Characteristics, 300MHz, Gain = 2, VOS = 0V
3600 3200 VCC = 3.6V 3600 3200
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
2800 2400 2000 1600 1200 800 400 TA = 25C
VOUT OUTPUT VOLTAGE (mV)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
Typical Detector Characteristics, 3000MHz, Gain = 2, VOS = 0V
3600 3200 VCC = 3.6V 3600 3200
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
2800 2400 2000 1600 1200 800 400 TA = 85C TA = 25C TA = -40C
VOUT OUTPUT VOLTAGE (mV)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
UW
5.5
5532 G1a
(RLOAD = 20k)
Supply Current vs Supply Voltage (RF Input Signal Off)
1000
Output Delay vs RF Input Power
VCC = 3.6V TA = 25C VOS = 0V GAIN = 2
480
800 TA = -40C
600
460
TA = 25C TA = 85C
400
90% SWITCHING
440
200
50% SWITCHING
6.0
420 2.5
0 3.0 3.5 5.0 SUPPLY VOLTAGE (V) 4.0 4.5 5.5 6.0
-10
0 -5 5 RF INPUT POWER (dBm)
10
5532 G23
5532 G2a
Typical Detector Characteristics, 1000MHz, Gain = 2, VOS = 0V
VCC = 3.6V TA = -40C 3600 3200 2800 2400 2000 1600 1200 800 400 4 8
Typical Detector Characteristics, 2000MHz, Gain = 2, VOS = 0V
VCC = 3.6V
TA = -40C
TA = 25C
TA = 85C
TA = 85C
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5532 G01
5532 G02
5532 G03
Typical Detector Characteristics, 4000MHz, Gain = 2, VOS = 0V
VCC = 3.6V 3600 3200 2800 2400 2000 1600 1200 800 400 4 8
Typical Detector Characteristics, 5000MHz, Gain = 2, VOS = 0V
VCC = 3.6V
TA = -40C
TA = 25C
TA = 85C
4
8
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5532 G04
5532 G05
5532 G06
5532i
3
LTC5532 TYPICAL PERFOR A CE CHARACTERISTICS
Typical Detector Characteristics, 6000MHz, Gain = 2, VOS = 0V
3600 3200 VCC = 3.6V 3600 3200
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 TA = 25C
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
TA = -40C
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
Typical Detector Characteristics, 1000MHz, Gain = 4, VOS = 0V
3600 3200 VCC = 3.6V 3600 TA = -40C
VOUT OUTPUT VOLTAGE (mV)
VOUT OUTPUT VOLTAGE (mV)
2800 2400 2000 1600 1200 800 400 TA = 25C
2800 2400 2000 1600 1200 800 400 VOS = 1V VOS = 0.5V VOS = 0.2V
VOUT OUTPUT VOLTAGE (mV)
TA = 85C
0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
VOUT OUTPUT VOLTAGE (mV)
4
UW
TA = 85C 4
5532 G07
(RLOAD = 20k) Typical Detector Characteristics, 300MHz, Gain = 4, VOS = 0V
3600 3200 TA = -40C 2800 2400 2000 1600 1200 800 400 8 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 TA = 25C TA = 85C VCC = 3.6V
Typical Detector Characteristics, 7000MHz, Gain = 2, VOS = 0V
VCC = 3.6V
2800 2400 2000 1600 1200 800 400 TA = 85C 3 TA = -40C TA = 25C
8
0 -32 -27 -22 -17 -12 -7 -2 RF INPUT POWER (dBm)
5532 G08
5532 G10
VOUT vs RF Input Power and VOS, 300MHz, Gain = 2
VCC = 3.6V 3200 TA = 25C 3600
VOUT vs RF Input Power and VOS, 1000MHz, Gain = 2
VCC = 3.6V 3200 TA = 25C 2800 2400 2000 1600 1200 800 400 VOS = 1V VOS = 0.5V
4
8
VOS = 0V 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
VOS = 0.2V VOS = 0V 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5532 G11
5532 G12
5532 G13
VOUT vs RF Input Power, 300MHz and 1000MHz, Gain = 2 and 4, VOS = 0V
3600 VCC = 3.6V 3200 TA = 25C 2800 2400 2000 1600 1200 800 400 300MHz GAIN = 2 300MHz GAIN = 4 1000MHz GAIN = 4
1000MHz GAIN = 2 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm)
4
8
5532 G14
5532i
LTC5532 TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power at 300MHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V 1000
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
100
100
VOUT SLOPE (mV/dB)
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5532 G15
VOUT Slope vs RF Input Power at 3GHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V 1000
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
100
100
VOUT SLOPE (mV/dB)
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5532 G18
VOUT Slope vs RF Input Power at 6GHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V 1000
VOUT SLOPE (mV/dB)
100
VOUT SLOPE (mV/dB)
10
1 -30
UW
-25
(RLOAD = 20k) VOUT Slope vs RF Input Power at 2GHz
1000 VCC = 3.6V GAIN = 2 VOS = 0V
VOUT Slope vs RF Input Power at 1GHz
VCC = 3.6V GAIN = 2 VOS = 0V
100
TA = -40C 10 TA = 85C
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5532 G16
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5532 G17
VOUT Slope vs RF Input Power at 4GHz
VCC = 3.6V GAIN = 2 VOS = 0V 1000
VOUT Slope vs RF Input Power at 5GHz
VCC = 3.6V GAIN = 2 VOS = 0V
100
TA = -40C 10 TA = 85C
TA = -40C 10 TA = 85C
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5532 G19
TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5
5532 G20
VOUT Slope vs RF Input Power at 7GHz
VCC = 3.6V GAIN = 2 VOS= 0V
100
TA = -40C TA = 85C
TA = -40C 10 TA = 85C TA = 25C 1 -30
TA = 25C
-20 -15 -10 -5 RF INPUT POWER (dBm)
0
5
5532 G21
-25
-20 -15 -10 -5 RF INPUT POWER (dBm)
0
5
5532 G22
5532i
5
LTC5532 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.30 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50 3.70 3.90 4.10 4.30 4.50 4.70 4.90 5.10 5.30 5.50 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.00 RESISTANCE () 290.45 234.41 178.25 137.31 109.17 86.30 68.65 57.48 49.79 43.56 38.67 34.82 31.68 29.13 27.17 25.73 24.56 23.18 22.31 20.73 19.88 19.40 19.05 19.08 19.55 20.85 21.94 20.60 19.29 18.69 18.53 18.74 19.79 19.75 19.99 REACTANCE () -136.22 -162.54 -170.53 -159.89 -147.57 -136.18 -121.74 -107.60 - 96.72 - 86.70 -77.91 -70.13 - 62.86 - 56.01 - 49.83 - 44.24 - 39.74 - 35.35 - 30.62 -26.88 -22.31 -18.23 -14.25 -10.21 - 6.30 - 2.84 -1.49 - 0.07 2.99 6.61 10.39 14.35 17.91 20.77 22.47
6
UW
S11 Forward Reflection Impedance
0.3000GHz-7.000GHz
5508 TA03
5532i
LTC5532 TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C)
FREQUENCY (GHz) 0.30 0.50 0.70 0.90 1.10 1.30 1.50 1.70 1.90 2.10 2.30 2.50 2.70 2.90 3.10 3.30 3.50 3.70 3.90 4.10 4.30 4.50 4.70 4.90 5.10 5.30 5.50 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.00 RESISTANCE () 216.45 190.63 161.98 133.17 113.08 94.55 75.33 63.52 55.19 48.64 43.73 39.71 36.47 33.69 31.61 29.78 28.27 26.63 26.12 24.20 23.28 22.60 22.21 22.15 22.61 23.90 24.97 23.51 22.25 21.57 21.43 21.69 22.68 22.81 23.07 REACTANCE () -76.47 -98.28 -112.03 -111.53 -109.05 -107.08 - 98.50 - 88.19 - 80.05 -72.23 - 64.81 - 58.31 - 52.27 - 46.77 - 41.25 -36.61 -32.39 -28.12 -23.97 -20.75 -16.69 -12.77 - 9.08 -5.24 -1.58 1.53 2.62 4.00 6.94 10.62 14.02 17.77 21.24 24.21 25.56
UW
S11 Forward Reflection Impedance
0.3000GHz-7.000GHz
5508 TA04
5532i
7
LTC5532
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. VOS (Pin 3): VOUT Offset Voltage Adjustment. From 0V to 120mV, VOUT does not change. Above 120mV, VOUT will track VOS. VM (Pin 4): Negative Input to Buffer Amplifier. VOUT (Pin 5): Detector Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors.
BLOCK DIAGRA
RFSOURCE
12pF TO 200pF (DEPENDING ON APPLICATION)
RFIN
1 4 500 BIAS 31k 25pF 24k VM
GND 2
8
W
U
U
U
VCC 6
+
BUFFER 500 5 VOUT
-
+
RF DET 80k
+ -
120mV
3
VOS
-
80k
50A
50A
+
5532 BD
5532i
LTC5532
APPLICATIO S I FOR ATIO
Operation The LTC5532 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and a level shift amplifier to convert the RF input signal to DC. The LTC5532 has both gain setting and voltage offset adjustment capabilities. Buffer Amplifier The output buffer amplifier is capable of supplying typically 4mA into a load. The negative terminal VM is brought out to a pin for gain selection. External resistors connected between VOUT and VM (RA) and VM to ground (RB) will set the gain of this amplifier. Gain = 1 + RA/RB The amplifier is unity gain stable; however a minimum gain of two is recommended to improve low output voltage accuracy. The amplifier has a bandwidth of 2MHz with a gain of 2. For increased gain applications, the bandwidth is reduced according to the formula: Bandwidth = 4MHz/(Gain) = 4MHz * RB/(RA + RB) A capacitor can be placed across the feedback resistor RA to shape the frequency response. In addition, the amplifier can be used as a comparator. VM can be connected to a
RFIN
C4 39pF 1 R1 (OPT) 2 3
OFFSET ADJUSTMENT
U
reference voltage. When the internal detector output voltage (which is connected to the positive input of the buffer amplifier) exceeds the external voltage on VM, VOUT will switch high. The VOS input controls the DC input voltage to the buffer amplifier. VOS must be connected to ground if the DC output voltage is not to be changed. The buffer is initially trimmed to 120mV (Gain = 2x) with VOS connected to ground. The VOS pin is used to change the initial VOUT starting voltage. This function, in combination with gain adjustment enables the LTC5532 output to span the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 120mV. The starting voltage at VOUT for VOS >120mV is: VOUT = 0.5 * VOS * Gain where gain is the output buffer gain. For a buffer gain of 2x, VOUT will exactly track VOS above 120mV. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A and drives a 25pF internal peak detector capacitor.
Demo Board Schematic
VCC 2.7V TO 6V LTC5532ES6 RFIN VCC 6 5 4 C3 (OPT) R2 10k 1% R3 10k 1% GND
5532 DB
W
U
U
C1 0.1F C2 100pF VOUT
GND VOUT VOS VM
5532i
9
LTC5532
APPLICATIO S I FOR ATIO
Applications The LTC5532 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 8dBm for frequencies from 300MHz to 7GHz. The LTC5532 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled data (or audio) output and DC-coupled RSSI output for signal strength measurements and AGC. The LTC5532 can be used for RF power detection and control. Figure 1 is an example of a transmitter power
LTC5532ES6 1 2 OFFSET ADJUSTMENT 3 RFIN VCC 6 5 4
GND VOUT VOS VM
Figure 1. Mobile Phone TX Power Control Application Diagram with a Capacitive Tap
10
U
control, using the LTC5532 with a capacitive tap to the power amplifier. A 0.5pF capacitor (C1) followed by a 200 resistor (R1) form a coupling circuit with about 20dB loss at 900MHz referenced to the LTC5532 RF input pin. In the actual product implementation, component values for the capacitive tap may be different depending on parts placement, PCB parasitics and parameters of the antenna. The LTC5532 can be configured as a comparator for RF power detection and RF power alarms. The characterization data includes a plot of the LTC5532 output delay in response to a positive input step of varying RF level.
0.1F Li-Ion TX PA MODULE CELL BAND DIPLEXER R1 200 1% C1 0.5pF 5% R2 PCS BAND R3 MOBILE PHONE DSP VPC BSE
5532 F01
W
UU
5532i
LTC5532
PACKAGE DESCRIPTIO U
S6 Package 6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62 MAX 0.95 REF 2.90 BSC (NOTE 4) 1.22 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID 0.95 BSC 0.30 - 0.45 6 PLCS (NOTE 3) 0.80 - 0.90 0.20 BSC 1.00 MAX DATUM `A' 0.01 - 0.10 0.09 - 0.20 (NOTE 3) 1.90 BSC
S6 TSOT-23 0302
3.85 MAX 2.62 REF
RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR
0.30 - 0.50 REF NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193
5532i
11
LTC5532
RELATED PARTS
PART NUMBER LTC1757A LTC1758 LTC1957 LTC4400 LTC4401 LTC4403 LT5500 LT5502 LT5503 LT5504 LTC5505 LT5506 LTC5507 LTC5508 LTC5509 LT5511 LT5512 LTC5515 LTC5516 DESCRIPTION RF Power Controller RF Power Controller RF Power Controller RF Power Controller in SOT-23 Package RF Power Controller in SOT-23 Package RF Power Controller for EDGE/TDMA 1.8GHz to 2.7GHz RF Front End 400MHz Quadrature Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 800MHz to 2.7GHz RF Measuring Receiver 300MHz to 3.5GHz RF Power Detector 500MHz Quadrature IF Demodulator with VGA 100kHz to 1GHz RF Power Detector 300MHz to 7GHz RF Power Detector 300MHz to 3GHz RF Power Detector High Signal Level Up Converting Mixer High Signal Level Down Converting Mixer 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator COMMENTS Single/Dual Band GSM/DCS/GPRS Mobile Phones Single/Dual Band GSM/DCS/GPRS Mobile Phones Single/Dual Band GSM/DCS/GPRS Mobile Phones Single/Dual Band GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW Single/Dual Band GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW Multiband GSM/GPRS/EDGE Mobile Phones Dual LNA gain Setting +13.5dB/-14dB at 2.5GHz, Double-Balanced Mixer, 1.8V VSUPPLY 5.25V 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain 48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply SC70 Package SC70 Package RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC-3GHz, 20dBm IIP3, Integrated LO Buffer 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator
5532i
12
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 q FAX: (408) 434-0507
q
LT/TP 0803 1K * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2003

▲Up To Search▲

Price & Availability of LTC5532

	To Download LTC5532 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .